Integrated polarization beam splitter with relaxed fabrication tolerances
نویسندگان
چکیده
منابع مشابه
Ultracompact and fabrication-tolerant integrated polarization splitter.
Design and fabrication of a 2×2 two-mode interference (TMI) coupler based on-chip polarization splitter is presented. By changing the angle between the access waveguides, one can tune the effective TMI length for the mode with less optical confinement (transverse magnetic, TM) to coincide with the target TMI length for a desired transmission of the mode with higher optical confinement (transver...
متن کاملIntegrated mode-evolution-based polarization splitter.
A mode-evolution-based polarization splitter suitable for high-index-contrast systems and directly integratable with a recently reported on-polarization rotator is described and its performance verified through both finite-difference time-domain and eigenmode expansion simulations. For a device length of 200 microm, greater than 22 dB of extinction is obtained across a 1.45-1.75-microm bandwidth.
متن کاملPolarization Sagnac interferometer with a reflective grating beam splitter.
All-reflective interferometric gravitational-wave detector configurations with a diffraction grating as a power beam splitter have been proposed to reduce thermal lensing. We demonstrate the use of a diffraction grating as a polarization beam splitter in a zero-area polarization Sagnac interferometer.
متن کاملHighly fabrication tolerant InP based polarization beam splitter based on p-i-n structure.
In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. To achieve the splitting, we combine the Pockels effect and the plasma dispersion effect in a symmetric 1x2 Mach-Zehnder interferometer (MZI). One p-i-n phase shifter of the MZI is driven in forward bias to exploit the plasma dispersion effect and modify the phase of both the TE a...
متن کاملFour-port integrated polarizing beam splitter.
In this Letter, we report on the first integrated four-port polarizing beam splitter. The device operates on the principle of mode evolution and was implemented in a silicon-on-insulator silicon photonics platform and fabricated on a 300 mm CMOS line using 193 nm optical immersion lithography. The adiabatic transition forming of the structure enabled over a 150 nm bandwidth from λ~1350 to λ~150...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2013
ISSN: 1094-4087
DOI: 10.1364/oe.21.014146